产品概述/Product Introduction：

♦ 直拉法晶体生长专用设备，可实现在高压、真空和保护气氛下直拉生长晶体

Special equipment for Czochralski crystal growth, which can realize Czochralski crystal growth under high pressure, vacuum and protective atmosphere

♦ 采用自动称重结构，在保证晶体品质的前提下实现了直拉晶体的自动生长过程

Adopting automatic weighing structure, the automatic growth process of Czochralski crystal is realized on the premise of ensuring crystal quality

产品特点/Product Characteristics：

♦ 高精度的传感器和控制软件

High precision sensor and control software

♦ 自动控制晶体外形

Automatic control of crystal shape

♦ **温度:2400℃

Maximum temperature: 2400℃

♦ 晶体尺寸:2-8英寸

crystal size: 2-8 inches

应用范围/Scope：

♦ 应用于氧化家(Ga₂O₃)单晶生长，SiC单晶、激光单晶生长

Applied to Gallium Oxide(Ga₂O₃)Single Crystal Growth, SiC Single Crystal Growth and Laser SingleCrystal Growth