产品概述/Product Introduction：

♦ PECVD主要应用于氧化硅(SiO₂) 和氮化硅(SiN4) 材料的薄膜生长，工作原理是在低压引入高频射频电源，采取电容耦合方式使工艺气体电离放电，形成等离子体状态，产生大量的活性基团，这些活性基团在衬底材料表面发生化学反应并沉积到衬底表面，生长出氧化硅(SiO₂) 或氮化硅(SiN4) 薄膜

PECVD is mainly used for thin film growth of silicon oxide (SiO₂) and silicon nitride (SiN4) materials, The working principle is to introduce a high-frequency RF power supply at low voltage, ionize and discharge the process gas by capacitive coupling, and form a plasma state, which produces a large number of active groups. These active groups react chemically on the surface of the substrate material and depos- it on the bottom surface of the village, and grow silicon oxide (SiO₂) or silicon nitride (SiN4) thin films.

产品特点/Product Characteristics：

♦ 成膜质量高

High film quality

♦ 体积小占地面积小，操作简便

Small volume, small floor area and simple operation

♦ 具有良好的工艺性能，使用范围广泛

Has good process performance and wide application range