产品特点/Product characteristics：

♦ 提供两种工艺包

Two process packages are provided

①外形包:产出6英寸碳化硅(SiC) 单晶，外形不开裂

Shape package: 6-inch silicon carbide (SiC) single crystal is produced without cracking

②工艺包:晶型: 4H

Process package: Crystal form: 4H

电阻率:0.015~0.025ohm.cm

Resistivity: 0.015 ~ 0.025 ohm . cm

直径:150.25士0.25mm

Diameter: 150.25士0.25 mm

厚度:≥10 (Figure 2) mm

Thickness:≥10 (Figure 2) mm

微管密度:≤3ea/cm²

Microtubule density:≤3 ea/cm²

TSD:≤1000ea/cm²

♦ 温度**可达2400°C

Temperatures up to 2400°C