W4N8F-X-XXO0

8英寸晶向4度偏角N型4H碳化硅单晶抛光片

W4N6F-X-XXO0

6英寸晶向4度偏角N型4H碳化硅单晶抛光片

Low BPD Grade

Production Grade

Dummy Grade

直径 Diameter

150.0 mm±0.25mm (6") / 200.0 mm±0.25mm (8")

厚度 Thickness

350 μm±25μm for 6" / 350 μm±25μm for 8 " / 500 μm±25μm for 8 "

晶片方向 Wafer Orientation

Off axis : 4.0°toward < 11-20 > ±0.5°for 4H-N On axis : <0001>±0.5°for 4H-SI

主定位边方向 Primary Flat

{10-10}±5.0°

主定位边长度 Primary Flat Length

47.5 mm±2.5 mm for 6" / notch for 8"

边缘 Edge exclusion

3 mm

总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp

≤15μm /≤40μm /≤60μm

微管密度和基面位错MPD&BPD

MPD≤0.1 cm-2
BPD≤1000cm-2

MPD≤0.3cm-2

MPD≤5 cm-2

电阻率 Resistivity

0.015~0.025 Ω·cm

表面粗糙度 Roughness

Polish Ra≤1 nm

CMP Ra≤0.2 nm

裂纹(强光灯观测) #
Cracks by high intensity light

None

Cumulative  length ≤10mm,  single length≤2mm

六方空洞（强光灯观测）*
Hex Plates by high intensity light

None

Cumulative area  ≤5%

多型(强光灯观测)*
Polytype Areas by high intensity light

None

Cumulative area≤5%

划痕(强光灯观测)*&
Scratches by high intensity light

3 scratches to 1×wafer diameter
cumulative length

5 scratches to 1×wafer diameter
cumulative length

崩边# Edge chip

None

5 allowed,  ≤1 mm each

表面污染物（强光灯观测）
Contamination by high intensity light

None