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| 眉山天乐半导体6英寸SiC衬底片产品标准 6-inch SiC Substrate Specification | |||||
| 序号 Item | 等级 Grade | 精选级（Z级） Zero MPD Grade | 工业级（P级） Production Grade | 测试级（D级） Dummy Grade | |
| 1.晶体参数 Boule Parameters | |||||
| 1.1 | 晶型 Polytype | 4H-N | |||
| 1.2 | 表面晶向偏离度 Surface orientation error | Off axis：4.0°toward<11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.电学参数 Electrical Parameters | |||||
| 2.1 | 掺杂剂 Dopant | Nitrogen | |||
| 2.2 | 电阻率 Resistivity | 0.015-0.028Ω·cm | |||
| 3.机械参数 Mechanical Parameters | |||||
| 3.1 | 直径 Diameter | 149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness | 350μm±15μm | 350μm±25μm | ||
| 500μm±15μm | 500μm±25μm | ||||
| 3.3 | 主定位边方向 Primary Flat Orientation | {10-10}±5° | |||
| 3.4 | 主定位边长度 Primary Flat Length | 47.5mm±2.0mm | |||
| 3.5 | 局部平整度 LTV | ≤2.5μm | ≤2.5μm | ≤5μm | |
| 3.6 | 总厚度变化 TTV | ≤5μm | ≤5μm | ≤15μm | |
| 3.7 | 弯曲度**值 BOW | ≤25μm | ≤25μm | ≤40μm | |
| 3.8 | 翘区度 Warp | ≤25μm | ≤35μm | ≤60μm | |
| 3.9 | 正面(硅面)粗糙度(AFM)Front (Si-face) Roughness | Ra≤0.1nm | |||
| 4.结构 Structure | |||||
| 4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
| 4.3 | 螺位错 TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
| 4.4 | 基平面位错 BPD | ≤400cm-2 | ≤800cm-2 | / | |
| 4.5 | 刃位错 TED | ≤2000cm-2 | ≤4000cm-2 | / | |
| 5.正面质量 Front Quality | |||||
| 5.1 | 表面处理 Surface finish | CMP | |||
| 5.2 | 颗粒 Particle | ||||
| 5.3 | 划痕 Scratches | None | |||
| 5.4 | 缺口/崩边/裂纹/疵点/沾污 Edge chips/indents/cracks/stains/contamination | None | |||
| 5.5 | 多晶型 Polytype areas | None | None | Cumulative area ≤3% | |
| 5.6 | 正面激光标记 Front marking | / | |||
| 6.背面质量 Back Quality | |||||
| 6.1 | 背面处理 Back finish | CMP | |||
| 6.2 | 背面划痕 Scaratches | None | None | Cumulative length ≤1x wafer diameter | |
| 6.3 | 背面缺口/崩边 Back defects edge chip/indents | None | |||
| 6.4 | 背面粗糙度 Back roughness | Ra≤0.2 mm | Ra≤0.2 mm | Ra≤0.5 mm | |
| 6.5 | 背面激光标记 Back marking | 距离边缘1mm ( from top edge) | |||
| 7.边缘轮廓 Edge | |||||
| 7.1 | 边缘轮廓 Edge exclusion | 3 mm | |||
| 8.包装 Packaging | |||||
| 8.1 | 激光标记 Laser Marking(carbon side) | Carbon face | |||
| 8.2 | 包装 Packaging | 单片或25片包装 | |||
| Notes: None means no request. | |||||
| 眉山天乐半导体6英寸SiC衬底片产品标准 6-inch SiC Substrate Specification | |||||
| 序号 Item | 等级 Grade | 精选级（Z级） Zero MPD Grade | 工业级（P级） Production Grade | 测试级（D级） Dummy Grade | |
| 1.晶体参数 Boule Parameters | |||||
| 1.1 | 晶型 Polytype | 4H-N | |||
| 1.2 | 表面晶向偏离度 Surface orientation error | Off axis：4.0°toward<11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.电学参数 Electrical Parameters | |||||
| 2.1 | 掺杂剂 Dopant | Nitrogen | |||
| 2.2 | 电阻率 Resistivity | 0.015-0.028Ω·cm | |||
| 3.机械参数 Mechanical Parameters | |||||
| 3.1 | 直径 Diameter | 149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness | 350μm±15μm | 350μm±25μm | ||
| 500μm±15μm | 500μm±25μm | ||||
| 3.3 | 主定位边方向 Primary Flat Orientation | {10-10}±5° | |||
| 3.4 | 主定位边长度 Primary Flat Length | 47.5mm±2.0mm | |||
| 3.5 | 局部平整度 LTV | ≤2.5μm | ≤2.5μm | ≤5μm | |
| 3.6 | 总厚度变化 TTV | ≤5μm | ≤5μm | ≤15μm | |
| 3.7 | 弯曲度**值 BOW | ≤25μm | ≤25μm | ≤40μm | |
| 3.8 | 翘区度 Warp | ≤25μm | ≤35μm | ≤60μm | |
| 3.9 | 正面(硅面)粗糙度(AFM)Front (Si-face) Roughness | Ra≤0.1nm | |||
| 4.结构 Structure | |||||
| 4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
| 4.3 | 螺位错 TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
| 4.4 | 基平面位错 BPD | ≤400cm-2 | ≤800cm-2 | / | |
| 4.5 | 刃位错 TED | ≤2000cm-2 | ≤4000cm-2 | / | |
| 5.正面质量 Front Quality | |||||
| 5.1 | 表面处理 Surface finish | CMP | |||
| 5.2 | 颗粒 Particle | ||||
| 5.3 | 划痕 Scratches | None | |||
| 5.4 | 缺口/崩边/裂纹/疵点/沾污 Edge chips/indents/cracks/stains/contamination | None | |||
| 5.5 | 多晶型 Polytype areas | None | None | Cumulative area ≤3% | |
| 5.6 | 正面激光标记 Front marking | / | |||
| 6.背面质量 Back Quality | |||||
| 6.1 | 背面处理 Back finish | CMP | |||
| 6.2 | 背面划痕 Scaratches | None | None | Cumulative length ≤1x wafer diameter | |
| 6.3 | 背面缺口/崩边 Back defects edge chip/indents | None | |||
| 6.4 | 背面粗糙度 Back roughness | Ra≤0.2 mm | Ra≤0.2 mm | Ra≤0.5 mm | |
| 6.5 | 背面激光标记 Back marking | 距离边缘1mm ( from top edge) | |||
| 7.边缘轮廓 Edge | |||||
| 7.1 | 边缘轮廓 Edge exclusion | 3 mm | |||
| 8.包装 Packaging | |||||
| 8.1 | 激光标记 Laser Marking(carbon side) | Carbon face | |||
| 8.2 | 包装 Packaging | 单片或25片包装 | |||
| Notes: None means no request. | |||||
| 眉山天乐半导体6英寸SiC衬底片产品标准 6-inch SiC Substrate Specification | |||||
| 序号 Item | 等级 Grade | 精选级（Z级） Zero MPD Grade | 工业级（P级） Production Grade | 测试级（D级） Dummy Grade | |
| 1.晶体参数 Boule Parameters | |||||
| 1.1 | 晶型 Polytype | 4H-N | |||
| 1.2 | 表面晶向偏离度 Surface orientation error | Off axis：4.0°toward <11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.电学参数 Electrical Parameters | |||||
| 2.1 | 掺杂剂 Dopant | Nitrogen | |||
| 2.2 | 电阻率 Resistivity | 0.015-0.028Ω·cm | |||
| 3.机械参数 Mechanical Parameters | |||||
| 3.1 | 直径 Diameter | 149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness | 350μm±15μm | 350μm±25μm | ||
| 500μm±15μm | 500μm±25μm | ||||
| 3.3 | 主定位边方向 Primary Flat Orientation | {10-10}±5° | |||
| 3.4 | 主定位边长度 Primary Flat Length | 47.5mm±2.0mm | |||
| 3.5 | 局部平整度 LTV | ≤2.5μm | ≤2.5μm | ≤5μm | |
| 3.6 | 总厚度变化 TTV | ≤5μm | ≤5μm | ≤15μm | |
| 3.7 | 弯曲度**值 BOW | ≤25μm | ≤25μm | ≤40μm | |
| 3.8 | 翘区度 Warp | ≤25μm | ≤35μm | ≤60μm | |
| 3.9 | 正面(硅面)粗糙度(AFM)Front (Si-face) Roughness | Ra≤0.1nm | |||
| 4.结构 Structure | |||||
| 4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
| 4.3 | 螺位错 TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
| 4.4 | 基平面位错 BPD | ≤400cm-2 | ≤800cm-2 | / | |
| 4.5 | 刃位错 TED | ≤2000cm-2 | ≤4000cm-2 | / | |
| 5.正面质量 Front Quality | |||||
| 5.1 | 表面处理 Surface finish | CMP | |||
| 5.2 | 颗粒 Particle | ||||
| 5.3 | 划痕 Scratches | None | |||
| 5.4 | 缺口/崩边/裂纹/疵点/沾污 Edge chips/indents/cracks/stains/contamination | None | |||
| 5.5 | 多晶型 Polytype areas | None | None | Cumulative area ≤3% | |
| 5.6 | 正面激光标记 Front marking | / | |||
| 6.背面质量 Back Quality | |||||
| 6.1 | 背面处理 Back finish | CMP | |||
| 6.2 | 背面划痕 Scaratches | None | None | Cumulative length ≤1x wafer diameter | |
| 6.3 | 背面缺口/崩边 Back defects edge chip/indents | None | |||
| 6.4 | 背面粗糙度 Back roughness | Ra≤0.2 mm | Ra≤0.2 mm | Ra≤0.5 mm | |
| 6.5 | 背面激光标记 Back marking | 距离边缘1mm ( from top edge) | |||
| 7.边缘轮廓 Edge | |||||
| 7.1 | 边缘轮廓 Edge exclusion | 3 mm | |||
| 8.包装 Packaging | |||||
| 8.1 | 激光标记 Laser Marking(carbon side) | Carbon face | |||
| 8.2 | 包装 Packaging | 单片或25片包装 | |||
| Notes: None means no request. | |||||
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